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Mourn deeply! Academician liangjunwu, a famous Chinese semiconductor material scientist, died

On June 2three, twenty22, the Institute of semiconductors of the Chinese Academy of Sciences issued an obituary:Mr. liangjunwu, an academician of the Chinese Academy of engineering, a researcher of the Institute of semiconductors of the Chinese Academy of Sciences and a famous Chinese semiconductor material scientist, died in Beijing at one7:00 on June 2three, twenty22 at the age of 8nine.

Academician liangjunwu,one thousand nine hundred and thirty-threeyearninemontheighteenBorn in Wuhan, Hubei Province.onenine55year毕业于武汉大学,onenine56year至oneninesixtyyear就读于前苏联科学院莫斯科巴依可夫冶金研究所并获得副博士学位,同year到中国科学院半导体研究所工作至今。sixty多year来,他为我国半导体材料领域的学科建设、技术创新、产业振兴以及人才培养作出了重要贡献。梁骏吾院士先后荣获国家科委科技成果二等奖和新产品二等奖各oneThird prize of national science and Technology Progress AwardoneFirst prize for major achievements and scientific and technological progress of the Chinese Academy of SciencesthreeSecond and second prizesfourSecond prize of Shanghai Science and Technology Progress AwardoneSecond class various science and Technology AwardstwentyMore than times.oneninenine7year当选中国工程院院士。

梁骏吾院士在半导体材料科学领域辛勤耕耘、造诣颇深,并取得了一系列重要科研成果。上世纪sixtyyear代解决了高纯区熔硅的关键技术。onenine6fouryear制备出室温激光器用GaAs液相外延材料。onenine7nineyear研制成功为大规模集成电路用的无位错、无旋涡、低微缺陷、低碳、可控氧量的优质硅区熔单晶。80year代首创了掺氮中子嬗变硅单晶,解决了硅片的完整性和均匀性的问题。nine0year代初研究MOCVD生长超晶格量子阱材料,在晶体完整性、电学性能和超晶格结构控制方面,将中国超晶格量子阱材料推进到实用水平。主持“七五”、“八五”重点硅外延攻关,完成了微机控制、光加热、低压硅外延材料生长和设备的研究。他还在太阳电池用多晶硅的研究和产业化等方面发挥着积极作用。